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Significance of electrode-spacing in hydrogen detection for tin oxide-based MEMS sensor

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Significance of electrode-spacing in hydrogen detection for tin oxide-based MEMS sensor

Auteurs : RBID : Pascal:08-0260994

Descripteurs français

Pascal (Inist)
- Hydrogène, Oxyde d'étain, Procédé sol gel, Revêtement protecteur, Oxyde d'indium, Diffractométrie RX, Spectrométrie photoélectron, Dispositif microélectromécanique, Capteur mesure.
Wicri :
- concept : Hydrogène.

English descriptors

KwdEn :
- Hydrogen, Indium oxide, Measurement sensor, Microelectromechanical device, Photoelectron spectrometry, Protective coatings, Sol gel process, Tin oxide, X ray diffractometry.

Abstract

"Nano-Macro" and "Nano-Micro" integrated sensor-devices have been fabricated via sol-gel dip-coating the nanocrystalline indium oxide (In₂O₃)-doped tin oxide (SnO₂) thin films on the Pyrex glass and the microelectromechanical system (MEMS) substrates. The electrode-spacing for the "Nano-Macro" integrated sensor-device is maintained at 1 cm while that for the "Nano-Micro" integrated sensor-device is reduced to 10 and 20 μm. These sensor-devices with different electrode-spacing are characterized using glancing-angle X-ray diffraction (XRD), X-ray photoelectron spectroscope (XPS), and high-resolution transmission electron microscope (HRTEM); and subsequently utilized for sensing 900 ppm hydrogen (H₂) at room temperature under the dynamic test-condition. The "Nano-Macro" and "Nano-Micro" integrated sensor-devices exhibit maximum room temperature H₂ sensitivity of 10³ and > 10⁴ with the response time of 3h and 250-350s (for the room temperature H₂ sensitivity of 10²), respectively. Moreover, the "Nano-Micro" integrated sensor-device with the smaller electrode-spacing (10 μm) shows better response kinetics relative to that of the sensor-device with the larger electrode-spacing (20 μm). The observed sensor-behavior has been explained based on the effect of electrode-spacing on the kinetics of the H₂ sensing mechanism.

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Pascal:08-0260994

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<author><name sortKey="Shukla, Satyajit" uniqKey="Shukla S">Satyajit Shukla</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Materials & Minerals Division (MMD), National Institute of Interdisciplinary Science and Technology (NIIST) Council of Scientific and Industrial Research (CSIR), Industrial Estate P.O., Pappanamcode</s1>
<s2>Trivandrum 695019, Kerala</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Inde</country>
<wicri:noRegion>Trivandrum 695019, Kerala</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Advanced Materials Processing and Analysis Center (AMPAC), Mechanical Materials Aerospace Engineering (MMAE) Department Engineering # 381, 4000 Central Florida Blvd. University of Central Florida (UCF)</s1>
<s2>Orlando, FL 32826</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Orlando, FL 32826</wicri:noRegion>
</affiliation>
</author>
<author><name>PENG ZHANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Advanced Materials Processing and Analysis Center (AMPAC), Mechanical Materials Aerospace Engineering (MMAE) Department Engineering # 381, 4000 Central Florida Blvd. University of Central Florida (UCF)</s1>
<s2>Orlando, FL 32826</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>États-Unis</country>
<wicri:noRegion>Orlando, FL 32826</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Cho, Hyoung J" uniqKey="Cho H">Hyoung J. Cho</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Advanced Materials Processing and Analysis Center (AMPAC), Mechanical Materials Aerospace Engineering (MMAE) Department Engineering # 381, 4000 Central Florida Blvd. University of Central Florida (UCF)</s1>
<s2>Orlando, FL 32826</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<wicri:noRegion>Orlando, FL 32826</wicri:noRegion>
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</author>
<author><name sortKey="Ludwig, Lawrence" uniqKey="Ludwig L">Lawrence Ludwig</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Kennedy Space Center (KSC), National Aeronautics and Space Administration (NASA)</s1>
<s2>FL 32899</s2>
<s3>USA</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Floride</region>
</placeName>
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</author>
<author><name sortKey="Seal, Sudipta" uniqKey="Seal S">Sudipta Seal</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Advanced Materials Processing and Analysis Center (AMPAC), Mechanical Materials Aerospace Engineering (MMAE) Department Engineering # 381, 4000 Central Florida Blvd. University of Central Florida (UCF)</s1>
<s2>Orlando, FL 32826</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Orlando, FL 32826</wicri:noRegion>
</affiliation>
</author>
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<publicationStmt><idno type="inist">08-0260994</idno>
<date when="2008">2008</date>
<idno type="stanalyst">PASCAL 08-0260994 INIST</idno>
<idno type="RBID">Pascal:08-0260994</idno>
<idno type="wicri:Area/Main/Corpus">006A67</idno>
<idno type="wicri:Area/Main/Repository">005E39</idno>
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<seriesStmt><idno type="ISSN">0360-3199</idno>
<title level="j" type="abbreviated">Int. j. hydrogen energy</title>
<title level="j" type="main">International journal of hydrogen energy</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Hydrogen</term>
<term>Indium oxide</term>
<term>Measurement sensor</term>
<term>Microelectromechanical device</term>
<term>Photoelectron spectrometry</term>
<term>Protective coatings</term>
<term>Sol gel process</term>
<term>Tin oxide</term>
<term>X ray diffractometry</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Hydrogène</term>
<term>Oxyde d'étain</term>
<term>Procédé sol gel</term>
<term>Revêtement protecteur</term>
<term>Oxyde d'indium</term>
<term>Diffractométrie RX</term>
<term>Spectrométrie photoélectron</term>
<term>Dispositif microélectromécanique</term>
<term>Capteur mesure</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Hydrogène</term>
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<front><div type="abstract" xml:lang="en">"Nano-Macro" and "Nano-Micro" integrated sensor-devices have been fabricated via sol-gel dip-coating the nanocrystalline indium oxide (In<sub>2</sub>
O<sub>3</sub>
)-doped tin oxide (SnO<sub>2</sub>
) thin films on the Pyrex glass and the microelectromechanical system (MEMS) substrates. The electrode-spacing for the "Nano-Macro" integrated sensor-device is maintained at 1 cm while that for the "Nano-Micro" integrated sensor-device is reduced to 10 and 20 μm. These sensor-devices with different electrode-spacing are characterized using glancing-angle X-ray diffraction (XRD), X-ray photoelectron spectroscope (XPS), and high-resolution transmission electron microscope (HRTEM); and subsequently utilized for sensing 900 ppm hydrogen (H<sub>2</sub>
) at room temperature under the dynamic test-condition. The "Nano-Macro" and "Nano-Micro" integrated sensor-devices exhibit maximum room temperature H<sub>2</sub>
 sensitivity of 10<sup>3</sup>
 and > 10<sup>4</sup>
 with the response time of 3h and 250-350s (for the room temperature H<sub>2</sub>
 sensitivity of 10<sup>2</sup>
), respectively. Moreover, the "Nano-Micro" integrated sensor-device with the smaller electrode-spacing (10 μm) shows better response kinetics relative to that of the sensor-device with the larger electrode-spacing (20 μm). The observed sensor-behavior has been explained based on the effect of electrode-spacing on the kinetics of the H<sub>2</sub>
 sensing mechanism.</div>
</front>
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<fA11 i1="01" i2="1"><s1>SHUKLA (Satyajit)</s1>
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<fA11 i1="02" i2="1"><s1>PENG ZHANG</s1>
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<fA11 i1="03" i2="1"><s1>CHO (Hyoung J.)</s1>
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<fA14 i1="01"><s1>Materials & Minerals Division (MMD), National Institute of Interdisciplinary Science and Technology (NIIST) Council of Scientific and Industrial Research (CSIR), Industrial Estate P.O., Pappanamcode</s1>
<s2>Trivandrum 695019, Kerala</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
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<fA14 i1="02"><s1>Advanced Materials Processing and Analysis Center (AMPAC), Mechanical Materials Aerospace Engineering (MMAE) Department Engineering # 381, 4000 Central Florida Blvd. University of Central Florida (UCF)</s1>
<s2>Orlando, FL 32826</s2>
<s3>USA</s3>
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<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
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<fA14 i1="03"><s1>Kennedy Space Center (KSC), National Aeronautics and Space Administration (NASA)</s1>
<s2>FL 32899</s2>
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<fC01 i1="01" l="ENG"><s0>"Nano-Macro" and "Nano-Micro" integrated sensor-devices have been fabricated via sol-gel dip-coating the nanocrystalline indium oxide (In<sub>2</sub>
O<sub>3</sub>
)-doped tin oxide (SnO<sub>2</sub>
) thin films on the Pyrex glass and the microelectromechanical system (MEMS) substrates. The electrode-spacing for the "Nano-Macro" integrated sensor-device is maintained at 1 cm while that for the "Nano-Micro" integrated sensor-device is reduced to 10 and 20 μm. These sensor-devices with different electrode-spacing are characterized using glancing-angle X-ray diffraction (XRD), X-ray photoelectron spectroscope (XPS), and high-resolution transmission electron microscope (HRTEM); and subsequently utilized for sensing 900 ppm hydrogen (H<sub>2</sub>
) at room temperature under the dynamic test-condition. The "Nano-Macro" and "Nano-Micro" integrated sensor-devices exhibit maximum room temperature H<sub>2</sub>
 sensitivity of 10<sup>3</sup>
 and > 10<sup>4</sup>
 with the response time of 3h and 250-350s (for the room temperature H<sub>2</sub>
 sensitivity of 10<sup>2</sup>
), respectively. Moreover, the "Nano-Micro" integrated sensor-device with the smaller electrode-spacing (10 μm) shows better response kinetics relative to that of the sensor-device with the larger electrode-spacing (20 μm). The observed sensor-behavior has been explained based on the effect of electrode-spacing on the kinetics of the H<sub>2</sub>
 sensing mechanism.</s0>
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<s5>08</s5>
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Significance of electrode-spacing in hydrogen detection for tin oxide-based MEMS sensor

Significance of electrode-spacing in hydrogen detection for tin oxide-based MEMS sensor

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

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